? 1/8 SMP75-8 trisil? for telecom equipment protection rev. 4 smb (jedec do-214aa) january 2006 features bidirectional crowbar protection voltage: 8v low leakage current : i r = 2a max holding current: i h = 150 ma min repetitive peak pulse current : i pp = 75 a (10/1000s) main applications any sensitive equipment requiring protection against lightning strikes and power crossing: ethernet, t1/e1 description the SMP75-8 is a very low voltage transient surge arrestor especially designed to protect sensitive telecommunication equipment against lightning strikes and other transients. its low voltage makes it suitable to protect low voltage transformer in t1/ e1, ethernet links without saturation of the trans- former. benefits trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. they are used to help equipment to meet main standards such as ul1950, iec950 / csa c22.2 and ul1459. they have ul94 v0 approved resin. smb package is jedec registered (do-214aa). trisils comply with the following standards gr- 1089 core, itu-t-k20/k21, vde0433, vde0878, iec61000-4-5 and fcc part 68. table 1: order code part number marking SMP75-8 l08 figure 1: schematic diagram tm: trisil is a trademark of stmicroelectronics.
SMP75-8 2/8 table 2: in compliances with the following standards table 3: absolute ratings (t amb = 25c) standard peak surge voltag e (v) waveform voltag e required peak current (a) current waveform minimum serial resistor to meet standard ( ? ) gr-1089 core first level 2500 1000 2/10 s 10/1000 s 500 100 2/10 s 10/1000 s 5 3.3 gr-1089 core second level 5000 2/10 s 500 2/10 s 10 gr-1089 core intra-building 1500 2/10 s 100 2/10 s 0 itu-t-k20/k21 6000 1500 10/700 s 150 37.5 5/310 s 10 0 itu-t-k20 (iec61000-4-2) 8000 15000 1/60 ns esd contact discharge esd air discharge 0 0 vde0433 4000 2000 10/700 s 100 50 5/310 s 0 0 vde0878 4000 2000 1.2/50 s 100 50 1/20 s 0 0 iec61000-4-5 4000 4000 10/700 s 1.2/50 s 100 100 5/310 s 8/20 s 0 0 fcc part 68, lightning surge type a 1500 800 10/160 s 10/560 s 200 100 10/160 s 10/560 s 2.5 0 fcc part 68, lightning surge type b 1000 9/720 s 25 5/320 s 0 symbol parameter value unit i pp repetitive peak pulse current 10/1000 s 8/20 s 10/560 s 5/310 s 10/160 s 1/20 s 2/10 s 75 250 100 120 150 250 250 a i fs fail-safe mode : maximum current (note 1) 8/20 s 5 ka i tsm non repetitive surge peak on-state current (sinusoidal) t = 0.2 s t = 1 s t = 2 s t = 15 mn 14 8 6.5 2 a i 2 ti 2 t value for fusing t = 16.6 ms t = 20 ms 12 12.2 a 2 s t stg t j storage temperature range maximum junction temperature -55 to 150 150 c t l maximum lead temperature for soldering during 10 s. 260 c note 1: in fail safe mode, the device acts as a short circuit
SMP75-8 3/8 table 4: thermal resistances table 5: electrical characteristics (t amb = 25c) symbol parameter value unit r th(j-a) junction to ambient (with recommended footprint) 100 c/w r th(j-l) junction to leads 20 c/w symbol parameter v rm stand-off voltage v br breakdown voltage v bo breakover voltage i rm leakage current i pp peak pulse current i bo breakover current i h holding current v r continuous reverse voltage i r leakage current at v r c capacitance types i rm @ v rm i r @ v r dynamic v bo static v bo @ i bo i h c max. max. max. max. max. typ. max. note1 note 2 note 3 note 4 note 5 avav v v mama pf SMP75-8 2 6 5 8 20 15 800 50 60 note 1: i r measured at v r guarantee v br min vr note 2: see functional test circuit 1 note 3: see test circuit 2 note 4: see functional holding current test circuit 3 note 5: v r = 2v bias, v rms =1v, f=1mhz figure 2: pulse waveform figure 3: non repetitive surge peak on-state current versus overload duration 100 50 %i pp t t r p 0 t repetitive peak pulse current tr = rise time (s) tp = pulse duration time (s) i (a) tsm 1e-2 1e-1 1e+0 1e+1 1e+2 1e+3 0 5 10 15 20 25 30 35 40 45 50 f=50hz tj initial = 25c t(s)
SMP75-8 4/8 figure 4: on-state voltage versus on-state current (typical values) figure 5: relative variation of holding current versus junction temperature figure 6: relative variation of breakover voltage versus junction temperature figure 7: relative variation of leakage current versus reverse voltage applied (typical values) figure 8: variation of thermal impedance junction to ambient versus pulse duration (printed circuit board fr4, scu=35m, recommended pad layout) figure 9: relative variation of junction capacitance versus reverse voltage applied (typical values) i (a) t 10 100 012345678 tj=25c v (v) t i [tj] / i [tj=25c] hh 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 tj(c) v [tj] / v [tj=25c] bo bo 0.94 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 1.04 1.05 1.06 1.07 1.08 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 tj(c) 1 10 100 1000 10000 25 50 75 100 125 i [tj] / i [tj=25c] rr tj(c) z/r th(j-a) th(j-a) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 tp(s) c [v ] / c [v =2v] rr 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1 10 v (v) r f =1mhz v= 1v tj = 25c osc rms
SMP75-8 5/8 figure 10: test circuit 1 for dynamic i bo and v bo parameters figure 11: test circuit 2 for i bo and v bo parameters 100 v / s, di /dt < 10 a / s, ipp = 75 a 1 kv / s, di /dt < 10 a / s, ipp = 10 a u u 10 f 2 ? 45 ? 66 ? 470 ? 83 ? 0.36 nf 46 h 60 f 26 h 12 ? 250 ? 46 h 47 ? keytek 'system 2' generator with pn246i module keytek 'system 2' generator with pn246i module 220v 50hz 1/4 r1 = 140 ? r2 = 240 ? k ton = 20ms ibo measurement vbo measurement vout dut test procedure pulse test duration (tp = 20ms): v selection: for bidirectional devices = switch k is closed for unidirectional devices = switch k is open device with v < 200v v = 250 v , r1 = 140 out bo out rms ? ? device with v 200v v = 480 v , r2 = 240 bo out rms ? ?
SMP75-8 6/8 figure 12: ordering information scheme figure 12: test circuit 3 for dynamic i h parameter test procedure 1/ adjust the current level at the i value by short circuiting the ak of the d.u.t. 2/ fire the d.u.t. with a surge current h ? i= 10a, 10/1000s. 3/ the d.u.t. will come back off-state within 50ms maximum. pp this is a go-nogo test which allows to confirm the holding current (i ) level in a functional test circuit. h r v bat =-48v surge generator d.u.t smp 75 - 8 trisil surface mount repetitive peak pulse current voltage 75 = 75a 8 = 8v
SMP75-8 7/8 figure 13: smb package mechanical data figure 14: foot print dimensions (in millimeters) in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com. table 6: ordering information table 7: revision history part number marking package weight base qty delivery mode SMP75-8 l08 smb 0.11 g 2500 tape & reel date revision description of changes 19-july-2005 3 previous issue 02-jan-2006 4 added ecopack statement and changed page layout. minor updates to technical values in tables 2, 3, and 5. e c l e1 d a1 a2 b ref. dimensions millimeters inches min. max. min. max. a1 1.90 2.45 0.075 0.096 a2 0.05 0.20 0.002 0.008 b 1.95 2.20 0.077 0.087 c 0.15 0.41 0.006 0.016 e 5.10 5.60 0.201 0.220 e1 4.05 4.60 0.159 0.181 d 3.30 3.95 0.130 0.156 l 0.75 1.60 0.030 0.063 1.52 2.75 2.3 1.52
SMP75-8 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assu mes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replac es all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered tr ademark of stmicroelectronics. all other names are the property of their respective owners ? 2006 stmicroelectronics - all rights reserved stmicroelectronics group of compagnies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com
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